DMN2012UCA6-7 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

DMN2012UCA6-7

Description:

MOSFET BVDSS: 8V-24V X3-DSN2718-

Stock:

21977

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.11

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Parameters

Current at 25 ° C - continuous drain (Id)

Drain source voltage (Vdss)

FET Type

FET function

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

On resistance (maximum) for different Ids and Vgs

Power - maximum

Vgs (th) (maximum) for different Ids

packing

series

working temperature

Encapsulation/Housing

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Part status

On sale

DataSheet

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DMN2012UCA6-7（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory21977,Price reference "real-time change" China/Hongkong。 DMN2012UCA6-7 package/specs, Download DMN2012UCA6-7、Datasheet。